Electrical and Optoelectronic Properties of Silicon Heterojunction Solar Cells with Transparent Conductive Oxide Antireflective Coating

Abstract

The objective of this master research project is to simulate the solar cell based on silicon using the tool of SCAPS-1D. To achieve this goal, we built a cell of monocrystalline silicon based on the contact of n-type and p-type layers. Then we generate the calculation to determine the cell characteristics parameters like quantum efficiency and current density. The thickness of transparent conducting film of ZnO used as an antireflective layer on the top of the cell was optimized and fixed at 40 nm. To save consuming absorbing p layer, we optimized again its thickness that found to be 50 m. The last idea was to check the effect of double layer antireflective coating using different TCOs elements. A good agreement between our work and previous papers was observed and the double layer has a good effect on the current density.