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Etude par simulation d'un transistor HEMT à base InAIN/GaN

dc.contributor.advisorDouara, Abdelmalek
dc.contributor.authorZaghba, Samia
dc.contributor.authorRahouani, Amina
dc.date.accessioned2022-10-23T18:57:43Z
dc.date.available2022-10-23T18:57:43Z
dc.date.issued2021
dc.identifier.otherMM537-006
dc.identifier.urihttp://193.194.79.39:81/dspace.univ-tissemsilt.dz/handle/123456789/2312
dc.language.isofren_US
dc.titleEtude par simulation d'un transistor HEMT à base InAIN/GaNen_US
dc.typeBook chapteren_US


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